2010. 11. 29 1/6 semiconductor technical data kf3n50dz/iz n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features h v dss = 500v, i d = 2.5a h drain-source on resistance : r ds(on) =2.5 ? (max) @v gs = 10v h qg(typ) = 7.50nc maximum rating (tc=25 ? ) characteristic symbol rating unit drain-source voltage v dss 500 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 2.5 a @t c =100 ? 1.5 pulsed (note1) i dp 7 single pulsed avalanche energy (note 2) e as 110 mj repetitive avalanche energy (note 1) e ar 4 mj peak diode recovery dv/dt (note 3) dv/dt 10 v/ns drain power dissipation tc=25 ? p d 40 w derate above 25 ? 0.32 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 3.1 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w g d s pin connection 1. gate2. drain 3. source dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max0.90 max e e m n h 0.70 min n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j ipak(1) 123 a a b b c c d d e e f ff g g h h j j l l 0.96 max k m p m n p n k 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. gate2. drain 3. source (kf3n50dz/iz) kf3n50dz KF3N50IZ downloaded from: http:///
2011. 5. 23 2/6 kf3n50dz/iz revision no : 0 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l=22mh, i s =3a, v dd =50v, r g =25 ? , starting t j =25 ? . note 3) i s ? 3a, di/dt ? 100a/ k , v dd ? bv dss , starting t j =25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. 2 product namelot no 1 001 2 kf3n50dz 1 001 2 kf3n50 iz 1 marking characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 500 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 u , referenced to 25 ? - 0.55 - v/ ? drain cut-off current i dss v ds =500v, v gs =0v, - - 10 u gate threshold voltage v th v ds =v gs , i d =250 u 2.5 - 4.5 v gate leakage current i gss v gs = ? 25v, v ds =0v - - ? 10 u drain-source on resistance r ds(on) v gs =10v, i d =1.25a - 2.0 2.5 ? dynamic total gate charge q g v ds =400v, i d =3a v gs =10v (note4,5) - 8.0 - nc gate-source charge q gs - 2.0 - gate-drain charge q gd - 3.5 - turn-on delay time t d(on) v dd =250v i d =3a r g =25 ? (note4,5) - 15 - ns turn-on rise time t r - 20 - turn-off delay time t d(off) - 25 - turn-off fall time t f - 20 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 350 - pf output capacitance c oss - 45 - reverse transfer capacitance c rss - 4.5 - source-drain diode ratings continuous source current i s v gs 2011. 5. 23 3/6 kf3n50dz/iz revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) drain current i d (a) 10 0 10 -1 10 1 68 41 0 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.21.1 1.0 05 0 100 150 drain current i d (a) on - resistance r ds(on) ( ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.4 1.6 1.8 reverse drain current i s (a) 62 0 1 3 54 04 26 3 15 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 10 -1 10 0 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.02.5 1.0 1.5 2.0 c v gs =10v i ds = 1.5a v gs = 0v i ds = 250 25 c v gs =10v v gs =7v v ds =30v 25 c t c =100 c t c =100 c fig1. i d - v ds drain - source voltage v ds (v) 10 0 10 -1 10 -2 10 1 drain current i d (a) v gs =10v v gs =7v v gs =5v downloaded from: http:///
2011. 5. 23 4/6 kf3n50dz/iz revision no : 0 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm single pulse duty=0.5 0.02 0.05 0.1 0.2 0.01 fig9. safe operation area 0 21 0.5 1.5 3.5 3 2.5 75 150 125 50 100 02 5 drain current i d (a) c junction temperature t j ( ) fig10. i d - t j drain current i d (a) drain - source voltage v ds (v) 10 1 10 0 10 2 10 3 t c = 25 t j = 150 single pulse c c 10ms 1ms time (sec) fig11. transient thermal response curve transient thermal resistance gate - charge q g (nc) 0 1210 62 4 8 6 2 10 8 12 4 0 fig8. q g - v gs gate - source voltage v gs (v) i d =3a fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 0 5 15 25 35 10 20 30 40 c rss c oss c iss v ds = 400v operation in this area is limited by r ds(on) 10 s 100 s dc 10 1 10 2 10 3 10 0 10- 1 10 0 10 1 10 0 10 -1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -2 10 0 10 1 10 1 10 -2 downloaded from: http:///
2011. 5. 23 5/6 kf3n50dz/iz revision no : 0 fig12. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 l time e as = li as 2 bv dss - v dd bv dss 12 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss downloaded from: http:///
2011. 5. 23 6/6 kf3n50dz/iz revision no : 0 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss downloaded from: http:///
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